2010-03-12 1 bfq19s 1 2 2 3 npn silicon rf transistor* ? for low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 ghz at collector currents from 10 ma to 70 ma ? pb-free (rohs compliant) package 1) ? qualified according aec q101 * short term description esd ( e lectro s tatic d ischarge) sensitive device, observe handling precaution! type marking pin configuration package bfq19s fg 1 = b 2 = c 3 = e sot89 maximum ratings parameter symbol value unit collector-emitter voltage v ceo 15 v collector-emitter voltage v ces 20 collector-base voltage v cbo 20 emitter-base voltage v ebo 3 collector current i c 210 ma base current i b 21 total power dissipation 2) t s 85c p tot 1 w junction temperature t j 150 c operation junction temperature range t j o - ... - - ambient temperature t a -65 ... 150 c storage temperature t st g -65 ... 150 thermal resistance parameter symbol value unit junction - soldering point 3) r thjs 65 k/w 1 pb-containing package may be available upon special request 2 t s is measured on the collector lead at the soldering point to the pcb 3 for calculation of r thja please refer to application note thermal resistance
2010-03-12 2 bfq19s electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. dc characteristics collector-emitter breakdown voltage i c = 1 ma, i b = 0 v (br)ceo 15 - - v collector-emitter cutoff current v ce = 20 v, v be = 0 i ces - - 10 a collector-base cutoff current v cb = 10 v, i e = 0 i cbo - - 100 na emitter-base cutoff current v eb = 2 v, i c = 0 i ebo - - 100 a dc current gain- i c = 70 ma, v ce = 8 v, pulse measured h fe 70 100 140 -
2010-03-12 3 bfq19s electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. ac characteristics (verified by random sampling) transition frequency i c = 70 ma, v ce = 8 v, f = 500 mhz f t 4 5.5 - ghz collector-base capacitance v cb = 10 v, f = 1 mhz, v be = 0 , emitter grounded c cb - 1.05 1.35 pf collector emitter capacitance v ce = 10 v, f = 1 mhz, v be = 0 , base grounded c ce - 0.4 - emitter-base capacitance v eb = 0.5 v, f = 1 mhz, v cb = 0 , collector grounded c eb - 3.9 - noise figure i c = 20 ma, v ce = 6 v, z s = z sopt , f = 900 mhz f = 1.8 ghz f - - 1.8 3 - - db power gain, maximum available 1) i c = 70 ma, v ce = 8 v, z s = z sopt, z l = z lopt , f = 900 mhz f = 1.8 ghz g ma - - 11.5 7 - - transducer gain i c = 30 ma, v ce = 8 v, z s = z l = 50 ? , f = 900 mhz f = 1.8 ghz | s 21e | 2 - - 9.5 4 - - db third order intercept point at output v ce = 8 v, i c = 70 ma, z s = z sopt , z l = z lopt , f = 1.8 ghz ip 3 - 32 - dbm 1 g ma = |s 21 /s 12 | (k-(k 2 -1) 1/2 )
2010-03-12 4 bfq19s total power dissipation p tot = ? ( t s ) 0 20 40 60 80 100 120 c 150 t s 0 100 200 300 400 500 600 700 800 900 1000 mw 1200 p tot permissible pulse load r thjs = ? ( t p ) 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p 0 10 1 10 2 10 k/w r thjs 0.5 0.2 0.1 0.05 0.02 0.01 0.005 d = 0 permissible pulse load p totmax / p totdc = ? ( t p ) 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p 0 10 1 10 2 10 - p totmax / p totdc d = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
2010-03-12 5 bfq19s package sot89 reel ?180 mm = 1.000 pieces/reel reel ?330 mm = 4.000 pieces/reel package outline foot print marking layout (example) standard packing 0.8 0.8 2.0 1.0 1.2 2.5 0.7 0.45 +0.2 1) ejector pin markings possible 1.5 3 0.2 -0.1 b 0.25 1) 0.05 45? 0.15 2.5 0.1 4 0.25 m b b 0.15 0.1 0.35 0.2 1 max. 10? 1.5 0.1 0.2 1.6 -0.15 +0.1 2.75 0.1 4.5 0.1 1 x3 0.2 max. 1) 123 8 0.2 4.3 1.6 4.6 12 pin 1 2005, june date code (ym) baw78d type code pin 1 manufacturer
2010-03-12 6 bfq19s edition 2009-11-16 published by infineon technologies ag 81726 munich, germany ? 2009 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( ). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies components may be used in life-support devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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